Abstract

This chapter introduces several types of three-dimensional (3D) NAND flash memory cells. It first addresses the challenges of 3D NAND flash memory and discusses data retention issues. The data retention characteristic of SONOS cell has problems of quick charge loss and large Vt shift in retention bake because of charge detrapping through thinner tunnel oxide. The chapter presents the analysis results of program disturb in 3D NAND cells. The program disturb mechanisms of 3D NAND cells are much different from that of 2D NAND cells, because cell structure and array architecture are totally changed. The cell current is much decreased in the 3D NAND cell, because channel material is changed from crystal Si (substrate Si) to poly-Si. The chapter describes the new structure of the peripheral circuit under cell array. Finally, it discusses the future trend of the 3D NAND cell.

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