Challenges for ion implantation

Abstract

We review the many challenges that lie ahead for ion implantation. Continued device scaling requires the formation of ever-shallower, low-resistivity junctions. Recent trends in conventional implant and RTA processing, such as the use of ultra-low energy implants and spike anneals, allow these technologies to continue to be used for the formation of ultra-shallow junctions that meet the ITRS requirements for at least the 70 nm node. Successful fabrication of sub-100 nm devices will also require an understanding of the use of species such as indium and antimony for ultra-precise dopant placement. There will be an expanded use of high energy implantation. Applications here include triple well isolation for memory structures, and buried layer implants for W gettering. We discuss non-traditional applications of ion implantation. These include implants for the fabrication of SOI materials and implants into vertical device structures. We conclude with a discussion of the implications of these technologies on the future of the ion implantation business.