Abstract
Emerging nonvolatile memory (eNVM) devices are pushing the limits of emerging applications beyond the scope of silicon-based complementary metal oxide semiconductors (CMOS). Among several alternatives, phase change memory, spin-transfer torque random access memory, and resistive random-access memory (RRAM) are major emerging technologies. This review explains all varieties of prototype and eNVM devices, their challenges, and their applications. A performance comparison shows that it is difficult to achieve a “universal memory” which can fulfill all requirements. Compared to other emerging alternative devices, RRAM technology is showing promise with its highly scalable, cost-effective, simple two-terminal structure, low-voltage and ultra-low-power operation capabilities, high-speed switching with high-endurance, long retention, and the possibility of three-dimensional integration for high-density applications. More precisely, this review explains the journey and device engineering of RRAM with various architectures. The challenges in different prototype and eNVM devices is disused with the conventional and novel application areas. Compare to other technologies, RRAM is the most promising approach which can be applicable as high-density memory, storage class memory, neuromorphic computing, and also in hardware security. In the post-CMOS era, a more efficient, intelligent, and secure computing system is possible to design with the help of eNVM devices.
Highlights
In the era of advanced technology, electronic memory is an essential element to boost new applications
In prototype category ferroelectric random-access has enhanced the research area to find out the suitable alternative nonvolatile memory (NVM) [3] which can fulfill the high memory (FeRAM), phase change memory (PCM), magnetic RAM (MRAM), and spin-transfer-torque demand for performance for the regular industrial adoption
If an emerging NVM (eNVM) is based on carbon nanotube (CNT), amorphous carbon, and graphene, in general, that device refers as carbon memories sometime as nano-RAM (NRAM)
Summary
In the era of advanced technology, electronic memory is an essential element to boost new applications. The cost-effective, nonvolatile 1T based flash memory is cheap memory technology with ultra-fast, low power, ultra-high endurance and retention capacities very useful for mass storage applications and holds the biggest share of the semiconductor memory are the requirements of next-generation technologies [2]. In prototype category ferroelectric random-access has enhanced the research area to find out the suitable alternative NVM [3] which can fulfill the high memory (FeRAM), phase change memory (PCM), magnetic RAM (MRAM), and spin-transfer-torque demand for performance for the regular industrial adoption.
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