Abstract
A CFD numerical model has been established to study the growth of cadmium telluride (CdTe) on substrate using metalorganic chemical vapour deposition technique in atmospheric pressure (AP-MOCVD) and hydrodynamics in an inline MOCVD reactor. The numerical simulations have been conducted using the CFD code – ANSYS Fluent. Dimethylcadmium (DMCd) and diisopropyltelluride (DIPTe) have been employed as precursors while H2 is acting as the carrier gas. In order to assess the effect of various conditions on CdTe film growth and uniformity, heat transfer and mass transport behaviours of the chemical species in the reactor have been fully investigated. In addition, material utilization and fluid dynamics in the reactor are also discussed.
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