Abstract
The characteristics of silicon-oxide-nitride-oxide-silicon-type memories embedded with cerium oxide nanocrystals were demonstrated. They were fabricated by depositing a thin CeO2 film on the SiO2 tunneling layer and subsequently rapid-thermal annealing process. The mean size and aerial density of the CeO2 nanocrystals embedded in SiO2 are estimated to be about 8–10nm and (3–7)×1011∕cm−2 after a high-temperature annealing with different ambients on 900°C. The program/erase behaviors and data retention characteristics were described to demonstrate its advantages for nonvolatile memory device applications.
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