Abstract
This paper describes the properties and the model of ceramic CdS photovoltaic cell made by treating CdS ceramic plate electrochemically in copper ion solution. The compositions and structures were analysed by means of X-ray Ginuie Camera and X-ray microanalyser. It was found that Cu2-xS (0≦x≦0.2) is formed along grain boundaries over a range of a several ten microns of the surface layer, and that the photovoltaic junctions exist at grain boundaries in this surface layer. From examinations of the voltage dependence of the barrier capacitance, the junctions could be classified into step junction, graded junction and Mott barrier, according to the prepared method. The spectral response measurement indicates that the origin of the photo-emf of the Mott barrier is mostly impurity photovoltaic effect.
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