Cell geometry optimisation of 4H–SiC power UMOSFETs by electrothermal simulation

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Technology computer aided design (TCAD) models for electrothermal simulation of 4H–SiC UMOSFET devices are used to show that: (1) temperature gradients along the highly resistive channels of UMOSFET devices are not significant and (2) neglecting electrothermal effects during cell design simulations can lead to a nonoptimal cell geometry, resulting in up to 45% degradation in device on-state resistance.