Abstract
The formation of quantum dots (QDs) induced by electron beam irradiation onto a highly strained CdSe layer on ZnSe (001) is investigated. In situ reflection high-energy electron diffraction is used for dual purposes: QD formation by electron beam irradiation and monitoring the progress of surface morphology. QD formation is confirmed by observation of nanoscale three-dimensional islands using transmission electron microscopy. It is also verified by imaging of an isolated single QD emission at room temperature by photoluminescence microscopy. Electron beam irradiation increases QD size both in height and lateral directions, resulting in the shift of emission from green to yellow spectral region.
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