Abstract
CdSe nanoparticles (NPs) were generated in gas phase with a magnetron plasma gas aggregation cluster beam source. Coagulation-free CdSe nanocrystals with very clean particle surface and interface, as well as a fairly uniform spatial distribution were obtained. The deposited NPs have a good dispersity with a mean diameter of about 4.8nm. A strong photoluminescence band corresponding to the near- band-edge transition of the CdSe NPs was observed. The CdSe NP films show a significant photoconductance induced by laser irradiation. With an applied bias voltage of 10V, the photo- induced current can be as high as 0.4mA under 0.01mW/mm 2 405nm laser illumination. Our approach offers an alternative method for CdSe NP synthesis, which has the advantages such as high purity, good process and product control, as well as mass production, as compared to the existing methods.
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