Abstract
It was well-known that the n-type buffer layer grown by the chemical bath deposition (CBD) technique showed the highest efficiency for CIGS thin film solar cell. However, CBD process showed a serious drawback of producing considerable of waste solution and low yield. In this study, a novel technique called shallow chemical bath deposition (SCBD) was employed to grown Cadmium sulfide (CdS) thin film. UV-visible-NIR spectrophotometer and scanning electronic microscopy were employed to characterized the thin film quality. The results hinted that the SCBD technique showed excellent potential to get high quality thin film, which could be suitable to mass production of buffer layer for CIGS thin film solar cells.
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