Abstract
Abstract Thin film transistors were grown by the multiple-pumpdown method of vacuum deposition. The behaviour of CdS and CdSe thin film transistors with Nd 2 O 3 as the gate insulator was studied, and the various characteristics and parameters of the fabricated devices were determined. The performance of CdSe-Nd 2 O 3 thin film transistors was found to be superior to that of CdS/Nd 2 O 3 thin film transistors. The devices showed little change over a period of 4 months.
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