CdS:In Filmlerinin Karakterizasyonu ve Fotovoltaik Güneş Pillerinde Kullanılabilirliği

Abstract

CdS is important II-VI group compounds semiconductor materials which are used as the window material in photovoltaic solar cells. Solar energy is an enormous amount of energy that is produced by the sun. It is a free and widely available energy source. A solar cell is a device that converts the energy of sunlight directly into electricity by the photovoltaic effect. In this study, CdS:In thin films have been produced by the ultrasonic spray pyrolysis (USP) technique onto glasses. The deposition is carried out at substrate temperature of 300±5 ◦ C. In this study, we have reported some properties such as optical, electrical and surfaces, of In doped CdS films for different annealing temperatures. The optical parameters such as transmittance, absorbance and energy band gap of the films were investigated by UV/VIS spectrophotometer. The band gap of all the films were obtained from the absorbance measurements in the visible range. Their optical gap values were recorded in the range between 2.11-2.32 eV. Thickness of the films and optical parameters (refractive index, extinction coefficient) has been determined using spectroscopic ellipsometry (SE) technique. Atomic force microscope (AFM) images were taken to see the effect of annealing temperature on surface topography and roughness of the films. The electrical resistivity values of the films determined by using four probe techniques.