Abstract

In this work, CdS and In doped CdS films were prepared by ultrasonic spray pyrolysis (USP) technique and were annealed at 450 °C in an air atmoshpere. The optical constants (n and k) and thicknesses of the films were determined by spectroscopic ellipsometry. Transmission and absorbance spectra were taken by UV spectrophotometer. Optical method was used to determine the band gap value of the films. Atomic force microscope (AFM) images were taken to see the effect of annealing time on surface topography and roughness of the films. Electrical resistivities of the films were analyzed by four probe technique. As a result, the application potential of annealed CdS:In films for photovoltaic solar cells and optoelectronic applications were investigated.

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