Abstract
Abstract CdS/CdTe heterojunctions have been made on glass/ITO or glass/ITO/ZnO substrate by the hot wall vacuum evaporation method, and their photovoltaic properties have been investigated. The cell performances have been improved by using a ZnO layer since the ZnO layer suppressed the interdiffusion of indium and tin from ITO to the CdS layer. In addition, the back side contacts to the CdTe film have been studied by doping acceptor impurities such as Cu, Ag, and P. The best photovoltaic cell shows an efficiency of 10.3% under the condition of AM 1.0 and 100 mW/cm 2 .
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