Abstract
Films of n-type CdTe doped by coevaporation of indium have been deposited by hot wall vacuum evaporation on 7059 Corning glass and BaF2 single crystal substrates. Layers deposited on glass show a dark resistivity of the order of 105 Ω cm and a light resistivity of 500 Ω cm under AM1.5; photoexcitation increases the electron density but does not affect the electron mobility. Layers deposited on BaF2 show a dark resistivity of about 3 Ω cm and a light resistivity of about 2 Ω cm, corresponding to an electron density of 3.9×1016 cm−3 and an electron mobility of 48 cm2/V s; illumination of these layers on BaF2 increases the electron mobility but not the electron density. A quantitative model for grain boundary transport in polycrystalline materials is shown to give good agreement with the experimental data.
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