Abstract
Vacuum evaporated cadmium sulphide (CdS) thin films were implanted with <TEX>$Ar^+$</TEX> and <TEX>$N^+$</TEX> for different doses. The properties of the ion implanted CdS thin films have been analysed using XRD, optical transmittance spectra, and Raman scattering studies. Formation of Cd metallic clusters were observed in ion implanted films. The band gap of <TEX>$Ar^+$</TEX> doped films decreased from 2.385 eV of the undoped film to 2.28 eV for the maximum doping. In the case of <TEX>$N^+$</TEX> doped film the band gap decreased from 2.385 to 2.301 eV, whereas the absorption coefficient values increased with the increase of implantation dose. On implantation of both types of ions, the Raman peak position appeared at <TEX>$299\textrm{cm}^{-1}$</TEX> and the FWHM changed with the ion dose.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of the Korean Institute of Electrical and Electronic Material Engineers
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
