Abstract
A magnetoresistor is fabricated by using a thin film of n-type Cd3As2. The Hall mobility is constant below 200°K in most of thin films, and in some films below 300°K. The geometry of a device has an important effect on the magnetoresistance. The resistance of this magnetoresistor at zero magnetic field is 190Ω. The magnetoresistance changes according to B2 up to 1 Wb/m2. The resistance change of 4Ω is obtained at 0.5 Wb/m2. The magnetoresistance sensitivity is 0.7 m4Ω/Wb2. The Cd3As2 thin film magnetoresistor has the following advantages: 1) it can be easily prepared by the usual evaporation method; 2) this device has no temperature dependence below 200°K in most cases, and in some cases below room temperature.
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