Abstract
The dominant luminescence emission of excitons bound to a neutral acceptor defect (A 0, X) in as-grown high purity CdTe single crystals has been studied by Cd-dip treatment, doping with Cu and Ag, and irradiation with γ-rays from 60Co. It has been demonstrated that, by Cd-dip treatment, the dominant (A 0, X) emission can be annihilated to be a double-structure emission with their energy at 1.5896 and 1.5885 eV, respectively. Our doping experiments have unambiguously shown that (A 0, X) at 1.5896 eV is associated with residual impurities of Cu and (A 0, X) at 1.5885 eV with Ag. Further experiment with γ-ray irradiation has revealed a new (A 0, X) emission at 1.5892 eV in the double structure. We suggest that this emission is associated with Cd-vacancies introduced by γ-rays. To our knowledge, this is the first report on the isolated Cd-vacancies showing (A 0, X) emission with the energy position different from 1.5896 eV.
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