Abstract
HfO2 thin films with three different thickness (∼10 nm, ∼30 nm & ∼ 50 nm) were deposited on TiN/Si by Chemical Beam Vapor Deposition (CBVD) technique with combinatorial approach. The structural, morphological, and dielectric behavior of the films were examined in detail. XRD and Raman results revealed that the films have stable monoclinic phase irrespective of thickness. Atomic force microscopy (AFM) micrographs inferred homogeneity and crack free surfaces for all three thicknesses. Dielectric constant was found to be maximum (up to ∼ 67) for 2 kHz at room temperature which is three times higher than previously reported work. Furthermore, Impedance investigation explained the negative temperature coefficient of resistance (NTCR) behavior at the low-frequency region. CBVD grown HfO2 thin films represent promising properties in terms of structural, morphological, and dielectric in TiN/HfO2/Ag MIM structure thus could be a favorable candidate for the future capacitor applications.
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