Abstract

The positions of HOLZ lines in CBED zone axis patterns, taken from heteroeptaxial thin films, are influenced by both dynamical diffraction and strain effects. Rather than relying on a priori calculations for extracting the lattice mismatch from HOLZ line positions for sub-micron quaternary (InGaAsP) structures grown on InP, however, we have chosen to calibrate HOLZ line positions using X-ray lattice parameter measurements which were obtained from planar quaternary layers grown on InP substrates. For the active quaternary region of an electro-optical device structure, it is shown that this approach may be sensitive to a relative change in the lattice parameter as small as ±2 parts in 10 4 .

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