Abstract
In our previous paper, phonon-assisted and impurity-associated hopping processes were introduced to explain the c-axis resistivity in GICs. A different theory was proposed by Shimamura. Both theories provide a qualitative explanation for the observed behaviors in low-stage compounds but they cannot account for the high temperature behavior in high stage compounds. In this article two new mechanisms are introduced. One is the interaction of the carriers with the LO-phonons polarized along the c-axis. This is important in the low-stage compounds with large charge transfer. The other mechanism is the scattering of the carriers by stacking faults, which is important in high stage compounds. By considering the mechanisms proposed previously by us and by Shimamura together with the new mechanisms, we obtain a qualitative explanation for the temperature- and stage-dependences of the c-axis resistivity in GICs.
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