Abstract
Cracking of thick amorphous silicon films deposited in ultra high vacuum on crystalline substrates was investigated. It was found that microvoids occurring in amorphous films during deposition caused stresses in the films. The dependence of stresses in the amorphous film and in the substrate on film thickness were obtained. A method of preparation of thick (greater than 2 μm) non-cracked amorphous Si layers was proposed. It was revealed that during destruction of amorphous silicon film the partial structure relaxation of amorphous Si took place.
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