Cation and anion vacancies in proton irradiated GaInP

Abstract

Defects in electron irradiated GaInP grown by molecular beam epitaxy have been investigated using deep level transient spectroscopy (DLTS) and positron annihilation spectroscopy (PAS). PAS measurements indicate that vacancies are introduced at a high rate. Core annihilation curves, compared with theoretical calculations, are used to identify the principal defect in n-GaInP as cation vacancies, while phosphorus vacancies are seen in both undoped and n-type GaInP. The concentrations of defects obtained by PAS and Hall are in good agreement with each other. DLTS gives much lower values, possibly due to assumptions in the C–V analysis. These results give support to the identification of the midgap deep level observed using DLTS in irradiated and as-grown n-type and undoped GaInP as the phosphorus vacancy.