Abstract
AbstractThe cathodoluminescence technique to study the ZnSe‐based laser heterostructures is described. The heterostructures were grown by molecular beam epitaxy on GaAs (001) substrates and consist of bottom and top ZnMgSSe cladding layers and ZnCdSe/ZnSe quantum well or CdSe/ZnSe quantum dots sheets placed inside Zn(Mg)SSe/ZnSe graded index waveguide. The transport of charge carriers generated by electron beam in heterostructure was investigated using depth resolved cathodoluminescence. For that the dependence of cathodoluminescence intensity of active region on electron beam energy has been simulated using Monte‐Carlo calculation of carrier distribution on depth. It made possible the nondestructive characterization of multilayer heterostructure quality, to estimate both deficiency and carrier transport. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
