Cathodoluminescence Investigation of Stacking Faults and Dislocations in the Edge Part of Seed‐Grown m‐Plane GaN Substrate

Abstract

The extended defects in m‐plane seed‐grown GaN substrate have been investigated by cathodoluminescence (CL) and transmission electron microscopy (TEM). The presence of basal‐plane stacking faults (BSFs) has been confirmed in the edge part of seed growth. The luminescence features of BSFs are characterized by high‐resolution CL with monochromatic image and spatially resolved spectral analysis. Most stacking faults are intrinsic I1 BSFs with characteristic emission peak centered at 3.42 eV. There are a few intrinsic I2 BSFs which show varied emission energies of 3.33–3.38 eV. The motion of dislocations under electron beam irradiation has also been monitored and the correlation with stacking faults is discussed.