Abstract
Cathodoluminescent (CL) emission from Tm-doped Al x Ga 1 - x N (Al x Ga 1 - x N:Tm) has been observed with various Al compositions (0 ≤ x ≤ 1). According to CL spectrum from Al 0 . 8 1 G 0 . 1 9 N:Tm film 1 D 2 level-related CLemissions were observed to dominate: the strongest was blue at 464 nm and the next was UV at 369 nm, corresponding to the Tm 1 D 2 → 3 F 4 and 1 D 2 → 3 H 6 transitions, respectively. CL luminance increases with Al composition up to x = 0.8, then decreases for AlN:Tm, which is the same as in EL and PL. Luminance value was measured to be 19.4 cd/m 2 . The corresponding efficiency was 0.012 1m/W under 5 kV bias and 10 μA current flow. Temperature dependent CL from the Al 0 . 8 1 Ga 0 . 1 9 N:Tm film shows that 1 D 2 emission increases with temperature up to room temperature (RT) but 1 I 6 emission becomes quenched upon approaching RT.
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