Abstract
Black CuO films are used for improved radiation cooling of, e.g. an r.f. kicker at the Advanced Light Source of Lawrence Berkeley Laboratory. The films are required to be transparent to r.f. fields particularly in the range 1–1.25 GHz, UHV compatible, and very adhesive even after a number of baking cycles. Usual techniques such as wet-chemical coating do not fulfil the requirements for UHV compatibility. A cathodic arc plasma source with a copper cathode was operated in an oxygen atmosphere to form CuO films on the substrate, which was either the anode or was mounted on a substrate holder using a separate anode. The films are single-phase polycrystalline CuO. They are slightly oxygen-rich, adhere very well (pull strength exceeding 85 MPa) and fulfil all UHV requirements. The deposition method is very efficient, and large workpieces up to a surface area of 5000 cm 2 have been coated.
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