Abstract
Recent achievements in III-nitride semiconductor structures growth have allowed ultraviolet (UV) photo-detectors based on these compounds to be well established today. In this article, AlGaN film of 1-μm thickness was grown on Al2O3 substrate by metal-organic chemical vapor deposition (MOCVD). The AFM was used to analyze the surface morphology of the AlGaN film; X-ray diffraction measurements were used to study the quality of the film’ crystal structure; Cathode-ray luminescence(CL) was employed to study the luminescence properties of the AlGaN film. The result shows that there is a single atom layer on the AlGaN film’surface, and it shows that a low-defect-density AlGaN film with good surface morphology and single crystal Hexagonal structure has been obtained. It is found that there is some relationship between the film’crystal structure , dislocations and the luminescence properties . PACS: 73.61.
Published Version
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