Abstract
The cathodeluminescence (CL) properties of semiconductor bariumtitanate ceramics quenched at any sintering stage and applied voltage have been investigated.Oxygen vacancies (blight area) in grains were created at early sintering stage. High concentration of Ba vacancies of grainboundary diffuse towards inner grain.The reoxidation occured in the region from middle sintering stage to tinal one. The phenomenon is explained by the peak height of CL spectra. The peak height of CL spectra is related with specific resistance.The domain walls obserbed by CL image disappear when the temperature rises under the applied voltage condition. But there is no change for the grain boundary.
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