Abstract

Attempts made in past to detect target gases using semiconductor structure required high operational temperature. Whereas, in the present study, our research group could detect CO 2 gas at room temperature without using vacuum condition. For this purpose, a micro-fabricated device was made with simple MIS structure having Pd/TiO 2/SiO 2/Si-wafer/Al layers. The sensing performance of device was dependant on Pd–TiO 2 catalytic sensing layer quality because the role of TiO 2 layer was to reduce work function barrier between palladium and SiO 2 layer. The TiO 2 layer prepared by sintering at 500 °C or above showed anatase phase in XRD analysis. By using this device we could detect between 2.5% and 12.5% CO 2.

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