Abstract
High density ZnO nanowire arrays were successfully synthesized without catalyst by direct oxidation of zinc substrate in air below 400 °C, lower than the melting point of zinc metal. The as-grown ZnO nanowires are single crystalline with a Wurzite structure extending in <110> direction. The diameters of the ZnO nanowires range from 20 to 150 nm and the lengths from several to over ten micrometers. Room temperature photoluminescence measurements reveal an intense ultraviolet emission at 397 nm. The present work highlights the promise of the low temperature, direct oxidation process in the high-yield synthesis of high quality semiconductor nanowire arrays for nano-devices.
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