Abstract
We report on the fabrication of GaAs hexagonal nanowires surrounded by {110} vertical facets on a GaAs (111) B substrate using selective-area (SA) metalorganic vapor-phase epitaxial (MOVPE) growth. The substrate for SA growth was partially covered with thin SiO2, and a circular mask opening with a diameter d0 of 50–200 nm was defined. After SA-MOVPE, GaAs nanowires with a typical diameter d ranging from 50 to 200 nm and a height from 2 to 9μm were formed vertically on the substrate without any catalysts. The size of the nanowire depends on the growth conditions and the opening size of the masked substrate. A possible growth mechanism is also discussed.
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