Abstract
ABSTRACT The fundamental study of diamond nucleation on several kinds of substrates using the hot-filament CVD method, was carried out. To investigate the diamond nucleation density, the substrate which coated with the catalytic materials by the vacuum deposition was utilized. Diamond particles scarcely grew on a normal Si wafer, but a catalytic material promoted the growth of diamond on the Si substrate. The catalytic material increases the diamond nucleation density as compared with any other substrates with a surface treatment. The particles grown on the substrates have been examined by means of x-ray diffraction and scanning electron microscopy, and identified as diamond.
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