Abstract
Undoped semi-insulating CdTe crystals with an as-grown shape similar to the device profile for radiation detection has been grown by casting and subsequent unidirectional solidification. Crystals with maximum electrical resistivity of 5.7 × 10 10 Ω · cm and an average value 5 × 10 9 Ω · cm have been grown in a die of uncoated fused silica. Neither Cd source nor an inert gas overpressure was employed in the growth container. No additional preparation steps were required before the analysis of their detection behaviour. First measurements of the integral X-ray response have been carried out.
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