Abstract
In order to obtain undoped semi-insulating CdTe single crystals different growth methods from the melt have been compared. A Cd excess of δy Cd = 5 × 10 −3−1 × 10 −2 at% in the starting melt is required for crystallization of a near stoichiometric composition. In horizontal and vertical Bridgman techniques with controlled gas atmosphere a temperature difference between the free melt surface and Cd source of 300 and 270°C, respectively, needs to be maintained. Maximum electrical resistivities 10 10 Ω · cm have been obtained in shaped crystals growth by a new casting technique in uncoated silica dies.
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