Abstract
The residual voltage drop in the on state of an insulated-gate bipolar transistor, the basic device of today’s power electronics, is considerably higher than that of conventional thyristor-type devices, which is a serious disadvantage of the former. Field-controlled integrated thyristors offering a low residual voltage, as with conventional thyristors, and, at the same time, low turn-on and turn-off power losses in the control circuit, as is the case with insulated-gate bipolar transistors, seem to be promising for high-voltage high-power applications. Turn-off of these devices in the cascode mode with a series-connected low-voltage powerful FET is studied.
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