Abstract
It is shown that the photon avalanche mechanism can be used for producing nonequilibrium electron-hole pairs by low-intensity IR light with a photon energy smaller than the energy gap of a semiconductor by a factor of 3–5. A type II heterostructure with deep quantum wells is proposed to be employed for this purpose. In the model under investigation, the photon avalanche effect is due to a combination of a cascade of one-and two-photon transitions and Auger-type transitions.
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