Cascade amplification of optical absorption on III–V semiconductors via plasmon-coupled graphene

Abstract

Plasmons in graphene (Gr) show many fascinating characteristics, such as dynamic tunability, strong field confinement of light-matter interaction, and highly responsive, which has been widely exploited for a number of applications, including photodetectors, optical modulators, and sensors. In this paper, graphene plasmons (GPs) were motivated by implanting Au nanoparticles (Au NPs) into Ta2O5 thin layers adjacent to the Gr film, and the strong localized surface plasmon resonance (LSPR) effect has been proposed and demonstrated by placing the GPs structure on a III–V semiconductor quantum well saturable absorber (SA). It has been substantiated that the heightened interaction between light and Gr via LSPR predominantly occurs through the mechanisms of resonant energy transfer and local electromagnetic field enhancement, rather than direct electron transfer. Significant improvement on the nonlinear characteristics of the GPs modulated III–V semiconductor SA has been observed with a 17.1% large modulation depth and obviously improved working stability. A 1550 nm passive mode-locked laser has been successfully constructed with a pulse width down to 523 fs by integrating the SA into the laser cavity. This work lays the foundation for the development of high-performance mode-locked lasers and also demonstrates the substantial enhancement of nonlinear optical properties of various materials not limited to III–V semiconductors provided by this GPs' modulated structure; hence, these findings offer extensive prospects for applications in various photonics and optoelectronic devices.