Abstract
The carrier transport properties of 100 nm-thick Mg-doped InAlN films were investigated using a transmission line model. The electrical resistivity of InAlN:Mg films was 7400 Ωcm, indicating a semi-insulator. Temperature-dependent current-voltage measurements revealed that the predominant carrier transport is due to hopping conduction through deep-level defect states. The carrier transport at the metal contact/InAlN:Mg interface could be explained in terms of hopping conduction through deep-level states located 1.28 eV above the valence band.
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