Physical passivation of deep-level defect states in polymer dielectrics for outstanding dielectric properties

Abstract

The limited dielectric strength of polymer dielectrics hampers their reliable use in highly integrated electrical systems and high-energy storage film capacitors. This constraint is closely associated with the presence of deep-level defect states in polymer dielectrics. Here, we present an efficient and stable approach for the physical passivation of deep-level defect states aimed at enhancing the dielectric properties of polymer dielectrics. Employing inductively coupled plasma technology with argon as the carrier gas, the polymer undergoes substantial decreased deep-level defect states, as evidenced by nano-micro-region defect measurements. Consequently, the localized charge accumulation in the treated polymer dielectric is significantly reduced, resulting in a remarkable 62% increase in flashover voltage. The breakdown strength is also enhanced, and the treated material exhibits long-term stability. Moreover, materials featuring passivated deep-level defect states can boost discharge energy density without compromising efficiency. For instance, PTFE with passivated deep-level defect states maintains a discharge energy density of 1.18 J/cm3 and a charge-discharge efficiency of 95.06% at 200 °C and 300 MV/m. By focusing on deep-level defect states passivation, we introduce a strategy for receiving polymers with exceptional performance and stability.