Abstract
Electrical conductivities along the growth direction of undoped polycrystalline silicon (poly-Si) thin films deposited by plasma enhanced chemical vapor deposition on various textured substrates aiming for enhancing light trapping have been investigated using an AC conductivity measurement technique. Temperature dependence of electron and hole conductivities reveals that the Fermi level of poly-Si on the mildly textured substrates is located at the center of the band gap and this material is 'truly' intrinsic. On the other hand, poly-Si on the highly textured substrate exhibits n-type characteristic even though none of the deposition conditions for poly-Si is changed. The change in the electrical properties is induced by structural changes, especially the reduction in the degree of (220) crystallographic preferential orientation of poly-Si on highly textured substrates. Furthermore, photovoltaic performances of the poly-Si pin thin film solar cells fabricated on the textured substrates have been investigated and discussed from the result of electric-field-dependent carrier transport and collection.
Published Version
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