Abstract
The efficiency of charge transfer in SiC detectors irradiated with 8 MeV protons at a dose of 1014 cm−2 has been studied. The number of defects originally created in this irradiation mode is equivalent to that of disruptions produced in the lattice of SiC detectors used in experiments on the modernized SLHC collider (CERN). Methods of nuclear spectrometry were employed, with the detectors tested with 5.4 MeV alpha particles. Taking into account the deep compensation of SiC in the course of irradiation, the use of structures in the unconventional forward-biased mode is suggested. In this mode, the electric field strength is distributed across the detector thickness more uniformly. An illustrative model of carrier transport is suggested for processing of experimental data.
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