Abstract
A new solid state detector based on 6H-SiC is one of the promising devices in the nuclear industry for high-level radiation applications in a harsh high-temperature environment. SiC is a semi-conductor with a 3.03-eV band gap energy, and known as a radiation-resistance material. SiC detectors were fabricated by using a 6H-SiC wafer. The properties of the 6H-SiC wafer were over a 106 ohm-cm resistivity, a 380 μm thickness, and a (0001)-oriented type. The 6H-SiC detector was prepared by the processes of a dicing, etching, removal of an oxidation layer and a mounting on an alumina substrate. SiC detector was 10×10 mm2 with a 19.6mm2 active area. The circular metal contacts consisted of a Si-face/Ni/Au and a C-face/Ni/Au structure. Thin LiF and B film was coated onto the SiC detector surface for a neutron converter. The electrical current-voltage performances of the detectors were measured by using the Keithley 4200-SCS parameter analyzer with self voltage sources. Neutron responses were measured by using a 252Cf source.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
