Carrier scenarios in optically injected quantum-dot semiconductor lasers

Abstract

A model for optical injection locking in quantum dot (QD) lasers is stated where the electron and hole dynamics are treated separately and their scenarios in the ground state (GS), excited state (ES) in the QDs and in the wetting layer (WL) are examined. A decline in the GS electron occupation probability, and then, a left returned spiral behavior is shown in their phase space projections at high injection ratio. The GS occupation probabilities for electrons and holes are reduced drastically with increasing injection ratio. The injection map is also plotted.