Carrier removal rate for n-type and p-type silicon by fission-fragment irradiation

Abstract

A spreading resistance technique was applied to measure carrier removal rate in silicon by fission-fragment irradiation. It was observed that the impurity concentration affected the initial carrier removal rate for both n- and p-type silicon. The experimental results suggest the formation of clusters in fission-fragment damage. The initial carrier removal rate was determined to be 9.4×105 and 3.9×105 cm−1 for n- and p-type silicon at 298 °K; the impurity concentration for both types of silicon was 1×1015 cm−3. It was found that fission fragments had produced at least two deep level acceptors and one deep level donor and their levels were Ec−0.37 eV and Ec−0.51 eV for n-type silicon and Ev+0.27 eV for p-type silicon.