Abstract
We have studied the initial recombination and relaxation of photoexcited carriers in a-Si 1−xC x:H (0.1 < x < 0.3) by means of time and spectrally resolved photoluminescence (PL) in the range from 5 K to 200 K. We find a pronounced dependence of the PL decaytimes on the emitted photon energy as well as on the carbon content of the samples. The experimental results are described in a multiple trapping model. The characteristic time constants for relaxation and recombination are appreciably shorter as compared to a-Si:H. This difference is attributed to the broadening of the tail state distribution and the higher defect density in the a-Si 1−xC x:H.
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