Abstract
The general problems of hole transport and bimolecular recombination of charge carriers in molecularly doped polystyrene with an ultimately low dopant concentration (6 wt %) were considered. The experimental studies were performed by the radiation-induced time-of-flight method with bulk generation of charge carriers. The transient current curves were calculated using the multiple trapping model. Good agreement between the calculated and experimental curves of the transient current was achieved. The hole transport in the molecularly doped polymer was shown to be nonequilibrium. The bimolecular recombination was close to Langevin recombination when interpreted using the multiple trapping model.
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