Abstract
From Suh's total carrier number fluctuation model of 1/f noise generation mechanism, a model that seems to be able to describe the behavior of 1/f noise in various semiconductor devices is presented. The model is formulated in a simple logical procedure without any ambiguous or obscure assumptions and expresses the voltage fluctuation spectral density and the current fluctuation spectral density in terms of the short-circuited channel current fluctuation spectral density. The obtained expressions seem to fit in various experimental results.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
