Abstract
The optical properties of different AlGaAsSb semiconductor saturable absorber mirrors and InP∕AlGaAsSb heterostructures have been investigated by pump-probe and low temperature photoluminescence measurements. The results show that the type-II electron-hole recombination process at the InP–AlGaAsSb interface is responsible for the slow carrier decay time in the absorber. Nevertheless, this slow transition can be avoided by growing an AlAsSb barrier layer between InP and the absorber layer promoting the fast electron-hole recombination at the surface states on the absorber/air interface. This allows reducing the carrier decay time from several nanoseconds down to 20ps.
Published Version
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