Carrier lifetime in single-crystal PbS films

Abstract

The temperature dependence of the majority carrier lifetime was studied in single-crystal PbS films. In n- and p-type films in the range 300-200 ° K, τ increases exponentially with decreasing temperature, with an activation energy of e e ≈ O. 17-0. 2 eV. This m dependence is assumed due to the trapping of minority carriers at deep levels. Below ≈160 ° K in the n-type films, τ does not depend on the temperature, while in the p-type films, τ decreases exponentially with an activation energy of e ≈ 0. 11–0. 14 eV.